Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element

A method of manufacturing a nonvolatile memory element including

• a first electrode;
• a second electrode;
• and
• a resistance variable layer disposed between the first electrode and the second electrode,
• wherein the resistance variable layer includes an oxide containing tantalum and nitrogen and is a semiconductor or an electric conductor,
• the resistance variable layer switches from a high-resistance state to a low-resistance state in which a resistance value is lower than a resistance value corresponding to the high-resistance state, in response to a first electric signal with a first polarity which is applied between the first electrode and the second electrode, retains the low-resistance state after application of the first electric signal stops, switches from the low-resistance state to the high-resistance state in response to a second electric signal with a second polarity different from the first polarity which is applied between the first electrode and the second electrode, and retains the high-resistance state after application of the second electric signal stops, and
• the oxide is formed by a sputtering process.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• and
• a memory array including plural first electrode wires provided on the semiconductor substrate to extend in parallel with each other;
• plural second electrode wires provided above the plural first electrode wires to extend in parallel with each other within a plane parallel to a main surface of the semiconductor substrate and to three-dimensionally cross the plural first electrode wires, and nonvolatile memory elements which are provided to respectively correspond to three-dimensional cross points between the plural first electrode wires and the plural second electrode wires,
• wherein each of the nonvolatile memory elements includes a resistance variable layer disposed between the first electrode wire and the second electrode wire;
• wherein the resistance variable layer includes an oxide containing tantalum and nitrogen and is a semiconductor or an electric conductor, and
• the resistance variable layer switches from a high-resistance state to a low-resistance state in which a resistance value is lower than a resistance value corresponding to the high-resistance state, in response to a first electric signal with a first polarity which is applied between the first electrode wire and the second electrode wire retains the low-resistance state after application of the first electric signal stops, switches from the low-resistance state to the high-resistance state in response to a second electric signal with a second polarity different from the first polarity which is applied between the first electrode wire and the second electrode wire, and retains the high-resistance state after application of the second electric signal stops.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• and
• a memory array including plural first electrode wires provided on the semiconductor substrate to extend in parallel with each other;
• plural second electrode wires provided above the plural first electrode wires to extend in parallel with each other within a plane parallel to a main surface of the semiconductor substrate and to three-dimensionally cross the plural first electrode wires, and nonvolatile memory elements which are provided to respectively correspond to three-dimensional cross points between the plural first electrode wires and the plural second electrode wires,
• wherein each of the nonvolatile memory elements includes a first electrode connected to the first electrode wire;
• a second electrode connected to the second electrode wire;
• and a resistance variable layer disposed between the first electrode and the second electrode,
• the resistance variable layer comprises an oxide containing tantalum and nitrogen and is a semiconductor or an electric conductor, and
• the resistance variable layer switches from a high-resistance state to a low-resistance state in which a resistance value is lower than a resistance value corresponding to the high-resistance state, in response to a first electric signal with a first polarity which is applied between the first electrode and the second electrode, retains the low-resistance state after application of the first electric signal stops, switches from the low-resistance state to the high-resistance state in response to a second electric signal with a second polarity different from the first polarity which is applied between the first electrode and the second electrode, and retains the high-resistance state after application of the second electric signal stops.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• plural word lines and plural bit lines which are provided on the semiconductor substrate such that the plural word lines and the plural bit lines cross each other;
• plural transistors provided to respectively correspond to cross points between the plural word lines and the plural bit lines;
• and
• plural nonvolatile memory elements provided to respectively correspond to the plural transistors such that one nonvolatile memory element corresponds to one transistor,
• wherein each of the nonvolatile memory elements includes a first electrode, a second electrode, and a resistance variable layer disposed between the first electrode and the second electrode,
• the resistance variable layer comprises an oxide containing tantalum and nitrogen and is a semiconductor or an electric conductor, and
• the resistance variable layer switches from a high-resistance state to a low-resistance state in which a resistance value is lower than a resistance value corresponding to the high-resistance state, in response to a first electric signal with a first polarity which is applied between the first electrode and the second electrode, retains the low-resistance state after application of the first electric signal stops, switches from the low-resistance state to the high-resistance state in response to a second electric signal with a second polarity different from the first polarity which is applied between the first electrode and the second electrode, and retains the high-resistance state after application of the second electric signal stops.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• a logic circuit provided on the semiconductor substrate, for executing predetermined calculation;
• and
• a nonvolatile memory element provided on the semiconductor substrate and having a programming function,
• wherein the nonvolatile memory element includes a first electrode, a second electrode, and a resistance variable layer disposed between the first electrode and the second electrode,
• the resistance variable layer comprises an oxide containing tantalum and nitrogen and is a semiconductor or an electric conductor, and
• the resistance variable layer switches from a high-resistance state to a low-resistance state in which a resistance value is lower than a resistance value corresponding to the high-resistance state, in response to a first electric signal with a first polarity which is applied between the first electrode and the second electrode, retains the low-resistance state after application of the first electric signal stops, switches from the low-resistance state to the high-resistance state in response to a second electric signal with a second polarity different from the first polarity which is applied between the first electrode and the second electrode, and retains the high-resistance state after application of the second electric signal stops.