Method for forming dielectric films
AssigneesCanon Kabushiki Kaisha, Canon Anelva Corporation
InventorsYusuke Fukuchi, Naomu Kitano
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Abstract
A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.
Claims6
A method for forming a dielectric film including metal nitride silicate on a silicon substrate, comprising:
- a first step of depositing a film containing metal and silicon on the silicon substrate in a non-oxidizing atmosphere using a sputtering method;
- a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon using plasma containing at least a nitrogen atom at a temperature in which an amorphous state can be maintained;
- and
- a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon using microwave plasma having an electronic temperature of 2 eV or less and containing at least oxygen,
- wherein a ratio of silicon atoms to a total of metal atoms and silicon atoms in the metal nitride silicate film is 10 atom % or more, and
- wherein in the third step, at least a part of the silicon substrate which is in contact with the metal nitride silicate film is oxidized.
A method for forming a dielectric film including metal nitride silicate on a silicon substrate, comprising:
- a first step of oxidizing a surface of the silicon substrate to form a silicon oxide film and thereafter depositing a film containing metal and silicon on the silicon substrate in a non-oxidizing atmosphere using a sputtering method without removing the silicon oxide film formed in the first step;
- a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon using plasma containing at least a nitrogen atom at a temperature in which an amorphous state can be maintained;
- and
- a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon using plasma containing at least oxygen;
- wherein in the third step at least a part of the silicon substrate which is in contact with the metal nitride silicate film is oxidized.
Dependencies are inferred from the claim text.