Methods of forming metal patterns in openings in semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsTsukasa Matsuda, Gilheyun Choi, Jongmyeong Lee
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Abstract
A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
Claims18
A method of forming a semiconductor device, comprising:
- forming a dielectric layer on a semiconductor material;
- forming an opening in the dielectric layer, the opening having a concave sidewall;
- plasma-treating the concave sidewall so that an inner surface of the opening includes OH− radicals;
- forming a barrier metal layer directly on the concave sidewall of the opening so that the barrier metal layer is in direct contact with the dielectric layer after plasma-treating the concave sidewall;
- forming a metal layer in the opening.
A method of forming a semiconductor device, comprising:
- forming a dielectric layer on a semiconductor material;
- forming an opening in the dielectric layer, the opening having a sidewall;
- plasma-treating the sidewall so as to form a concave-convex profile on an inner surface of the opening, wherein the inner surface of the opening includes OH− radicals;
- forming a barrier metal layer having a thickness of less than or equal to 10 nm directly on the concave sidewall of the opening so that the barrier metal layer is in direct contact with the dielectric layer after plasma-treating the concave sidewall;
- forming a metal layer in the opening to form the semiconductor device;
- and
- heat-treating the semiconductor device so that the dielectric layer reacts with the barrier metal layer to form a diffusion barrier layer.
A method of forming a semiconductor device, comprising:
- forming a dielectric layer on a semiconductor material;
- forming an opening in the dielectric layer, the opening having an inner surface having a concave sidewall;
- plasma-treating the concave sidewall using an inert gas and/or water vapor so that the inner surface of the opening includes OH− radicals;
- forming a barrier metal layer directly on the plasma-treated concave sidewall of the opening;
- and
- forming a metal layer in the opening.
Dependencies are inferred from the claim text.