Back to results
US 8,148,256 B2Granted
Copper bonding method
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsFrançois Hébert, Anup Bhalla
Life of this patent
Estimating the term…
Abstract
A copper bonding compatible bond pad structure and associated method is disclosed. The device bond pad structure includes a buffering structure formed of regions of interconnect metal and regions of non-conductive passivation material, the buffering structure providing buffering of underlying layers and structures of the device.
Claims17
A method of forming a Cu bonding compatible bond pad structure comprising the steps of:
- depositing passivation material upon said bond pad structure;
- patterning said passivation material to provide a plurality of spaced-apart regions of said passivation material spaced-apart along a first direction, defining a plurality of hiatuses, portions of said bond pad structure in superimposition with said hiatuses being exposed and spaced-apart from a crown surface of said regions a second direction, extending transversely to said first direction, and wherein patterning further includes forming one of said plurality of spaced-apart regions with a zigzag shape.
Dependencies are inferred from the claim text.