Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods

A method of forming a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, comprising:

• providing a binary III-nitride material within a chamber;
• and
• epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising:
• providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors;
• formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5,600;
• and
• decomposing the nitrogen precursor and the two or more Group III precursors in the chamber;
• growing the layer of ternary III-nitride material to an average final thickness greater than about one hundred nanometers (100 nm);
• formulating the layer of ternary III-nitride material such that a relaxed lattice parameter mismatch between the layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material;
• and
• forming a plurality of V-pits in the layer of ternary III-nitride material, the plurality of V-pits having an average pit width of about two hundred nanometers (200 nm) or less in the fully grown layer of ternary III-nitride material.

A semiconductor structure comprising InGaN, the InGaN formed by a method comprising:

• providing a layer of GaN within a chamber;
• and
• epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising:
• providing a precursor gas mixture within the chamber;
• selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor;
• formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5,600;
• and
• decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN;
• wherein the fully grown layer of InGaN has an average final thickness greater than about one hundred nanometers (100 nm);
• wherein a relaxed lattice parameter mismatch between the fully grown layer of InGaN and the layer of GaN is at least about 0.5% of the relaxed average lattice parameter of the layer of GaN;
• and
• wherein the fully grown layer of InGaN comprises a plurality of V-pits therein having an average pit width of about two hundred nanometers (200 nm) or less.

A semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a method comprising:

• providing a substrate comprising a binary III-nitride material within a chamber;
• and
• epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising:
• providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors;
• formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5,600;
• and
• decomposing the nitrogen precursor and the two or more Group III precursors in the chamber;
• wherein the fully grown layer of ternary III-nitride material has an average final thickness greater than about one hundred nanometers (100 nm);
• wherein a relaxed lattice parameter mismatch between the fully grown layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material;
• and
• wherein the fully grown layer of ternary III-nitride material comprises a plurality of V-pits therein having an average pit width of about two hundred nanometers (200 nm) or less.

A method of forming a stack of layers of III-nitride material, comprising:

• providing a substrate within a chamber;
• epitaxially growing at least one layer of GaN and a plurality of layers of InGaN over the substrate within the chamber, wherein epitaxial growth of at least one layer of InGaN of the plurality of layers of InGaN comprises:
• providing a precursor gas mixture within the chamber;
• selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor;
• formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5,600;
• and
• decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor to form the at least one layer of InGaN;
• and
• forming the stack of layers of III-nitride material to have a final average total thickness greater than about one hundred nanometers (100 nm).