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AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsTroy J. Baker, Benjamin A. Haskell, James S. Speck, Shuji Nakamura
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A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
A method of defect reduction for a semipolar nitride film, comprising:
A semipolar nitride film, laterally grown over a mask or gaps on or above a top surface of a substrate, having less than 2 ×109 cm−2 threading dislocations and a top surface that is a semipolar plane, wherein the top surface of the semipolar nitride film is planar and parallel to the top surface of the substrate.
A semipolar nitride film, laterally grown over the mask or gaps on or above a top surface of a substrate, having less than 2 ×105 cm−1 basal plane stacking faults and a top surface that is a semipolar plane, wherein the top surface of the semipolar nitride film is planar and parallel to the top surface of the substrate.
Dependencies are inferred from the claim text.