US 8,148,242 B2 · Oxidation after oxide dissolution

Abstract

A method for manufacturing a SeOI substrate that includes a thin working layer made from one or more semiconductor material(s); a support layer; and a thin buried oxide layer between the working layer and the support layer. The method includes a manufacturing step of an intermediate SeOI substrate having a buried oxide layer with a thickness greater than a thickness desired for the thin buried oxide layer; and a dissolution step of the buried oxide layer in order to form therewith the thin buried oxide layer. After the dissolution step, an oxidation step of the substrate is conducted for creating an oxidized layer on the substrate, and an oxide migration step for diffusing at least a part of the oxide layer through the working layer in order to increase the electrical interface quality of the substrate and decrease its Dit value.

Claims20

Dependent claims

A method for manufacturing a SeOI substrate having a thin working layer made from one or more semiconductor material(s), a support layer, and a thin buried oxide layer between the working layer and the support layer, wherein the method comprises:

manufacturing an intermediate SeOI substrate having an initial buried oxide layer with a thickness greater than a thickness desired for the final thin buried oxide layer;
dissolving part of the initial buried oxide layer in order to form therewith the final thin buried oxide layer;
oxidizing the substrate to create a surface oxidized layer thereon;
diffusing at least a part of the oxide layer through the surface semiconductor working layer by oxide migration in an amount sufficient to increase the electrical interface quality of substrate and decrease its Dit value at the interface between the semiconductor working layer and the buried oxide layer.

1 more element

Dependencies are inferred from the claim text.

Oxidation after oxide dissolution

Life of this patent

Oxidation after oxide dissolution

Life of this patent

Abstract

Claims20