US 8,148,234 B2 · Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

Abstract

A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

Claims12

Dependent claims

A method for manufacturing a semiconductor structure, the method comprising:

supplying a crystalline semiconductor substrate;
providing a porous region adjacent to a surface of the semiconductor structure;
introducing a dopant into the porous region from the surface;
and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate, wherein at least one of a doping type, a doping concentration, and a doping distribution of the crystalline doping region is different from that of the semiconductor substrate.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/282,842Filed 9 Mar 2007

Priority

DE 10 2006 012 85721 Mar 2006

Published

US 2009/0236610 A124 Sep 2009

Granted

3 Apr 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10P 32/16
Diffusion of dopants within, into or out of semiconductor bodies or layers: between a solid phase and a liquid phase
H10P 32/12
Diffusion of dopants within, into or out of semiconductor bodies or layers: between a solid phase and a gaseous phase
H10P 32/14
Diffusion of dopants within, into or out of semiconductor bodies or layers: within a single semiconductor body or layer in a solid phase; between…
H10P 32/171
Characterised by the semiconductor material: being group IV material

Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

Life of this patent

Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

Life of this patent

Abstract

Claims12