Semiconductor power device having a top-side drain using a sinker trench

A semiconductor power device comprising:

• a plurality of groups of stripe-shaped gate trenches extending in a silicon region over a substrate;
• and
• a plurality of stripe-shaped sinker trenches each extending between two adjacent groups of the plurality of groups of stripe-shaped gate trenches, the plurality of stripe-shaped sinker trenches extending from a top surface of the silicon region through the silicon region and terminating within the substrate, the plurality of stripe-shaped sinker trenches being lined with an insulator along the sinker trench sidewalls so that a conductive material filling each sinker trench makes electrical contact with the substrate along the bottom of the sinker trench and makes electrical contact with an interconnect layer, wherein the plurality of sinker trenches are wider and extend deeper than the plurality of groups of stripe-shape gate trenches.