Semiconductor device and method of fabricating the same

A method for fabricating a semiconductor device, comprising:

• forming an active region in a semiconductor substrate;
• forming a conductive pattern on a predetermined region of the active region;
• forming an interlayer dielectric pattern on the conductive pattern, the interlayer dielectric pattern including an opening that exposes the predetermined region of the active region;
• forming a semiconductor pattern in the opening;
• forming a heater electrode pattern on the semiconductor pattern in the opening;
• forming a contact hole spaced apart from the opening, wherein the contact hole exposes the conductive pattern;
• forming a contact plug to substantially fill the contact hole;
• and
• forming a phase change material layer on the heater electrode pattern,
• wherein forming the conductive pattern and the interlayer dielectric pattern comprises:
• forming a silicide blocking layer over the predetermined region of the active region, the silicide blocking layer exposing a portion of the semiconductor substrate;
• forming a metal silicide pattern on the exposed portion of the semiconductor substrate;
• forming the interlayer dielectric pattern including the opening, wherein the opening exposes the silicide blocking pattern;
• and
• removing the silicide blocking pattern exposed by the opening.