Methods of making multilayered structures

A method of making a multilayered structure, comprising:

• growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;
• growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;
• brazing the top surface of the first diamond layer to the top surface of the second diamond layer wherein the brazing alloy adheres to the first and second diamond layers and has a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K;
• removing the first and second substrates;
• applying a first thin adhesion layer on the bottom surface of the first diamond layer;
• applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;
• applying a second thin adhesion layer on the bottom surface of the second diamond layer;
• and
• applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, and the second metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first and second thin adhesion layers is less than 10% compared to the thickness of each of the first and second metal layers.

A method of making a multilayered structure, comprising:

• growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;
• applying a first thin adhesion layer on the top surface of the first diamond layer;
• applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;
• growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;
• applying a second thin adhesion layer on the top surface of the second diamond layer;
• applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer;
• brazing or soldering the top surface of the first metal layer to the top surface of the second metal layer;
• removing the first and second substrates;
• applying a third thin adhesion layer on the bottom surface of the first diamond layer;
• applying a third metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the third thin adhesion layer;
• applying a fourth thin adhesion layer on the bottom surface of the second diamond layer;
• and
• applying a fourth metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the fourth thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first thin adhesion layer, the second thin adhesion layer, the third thin adhesion layer, and the fourth thin adhesion layer is less than 10% compared to the thickness of each of the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer.