Piezoelectric element and method for manufacturing the same, liquid-ejecting head and method for manufacturing the same, and liquid-ejecting apparatus

A method for manufacturing a piezoelectric element including a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti), the method comprising:

• firing a piezoelectric precursor film having a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) to form a piezoelectric film;
• and
• supplying the piezoelectric film with a nitrogen-containing gas,
• wherein the gas supply is controlled such that the piezoelectric film has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.

A liquid-ejecting head comprising:

• a nozzle opening;
• a pressure-generating chamber in communication with the nozzle opening;
• and a piezoelectric element, the piezoelectric element being operated to eject liquid from the nozzle opening,
• wherein the piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti), and
• the piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.

A method for manufacturing a liquid-ejecting head that includes a nozzle opening, a pressure-generating chamber in communication with the nozzle opening, and a piezoelectric element, the piezoelectric element being operated to eject liquid from the nozzle opening, comprising:

• firing a piezoelectric precursor film having a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) to form a piezoelectric film;
• and
• supplying the piezoelectric film with a nitrogen-containing gas,
• wherein the gas supply is controlled such that the piezoelectric film has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.