Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a well region within the substrate;
• forming a gate structure over a surface of the substrate;
• forming a source region within the substrate adjacent to the gate structure;
• forming a drain region within the substrate adjacent to the gate structure opposite the source region;
• forming a first clamping region and second clamping region below the source region and drain region, respectively;
• forming a trench through the source region;
• forming a plug through the trench;
• forming a source tie through the trench over the plug;
• and
• forming an interconnect structure over the source region, drain region, and gate structure.

A semiconductor device, comprising:

• a substrate;
• a well region formed within the substrate;
• a gate structure formed over a surface of the substrate;
• a source region formed within the substrate adjacent to the gate structure;
• a drain region formed within the substrate adjacent to the gate structure opposite the source region;
• a first clamping region and second clamping region formed below the source region and drain region, respectively;
• a trench formed through the source region;
• a plug formed through the trench;
• a source tie formed through the trench over the plug;
• and
• an interconnect structure formed over the source region, drain region, and gate structure.

A power supply providing an output voltage to electronic equipment, comprising:

• an inductor coupled for receiving an input voltage of the power supply;
• a control circuit having an input coupled for receiving an output voltage of the power supply;
• and
• a power transistor having a drain terminal coupled to the inductor, gate terminal coupled to an output of the control circuit, and source terminal coupled to a power supply conductor, the power transistor including,
• (a) a substrate,
• (b) a well region formed within the substrate,
• (c) a gate structure formed over a surface of the substrate and coupled to the gate terminal,
• (d) a source region formed within the substrate adjacent to the gate structure and coupled to the source terminal,
• (e) a drain region formed within the substrate adjacent to the gate structure opposite the source region and coupled to the drain terminal,
• (f) a first clamping region and second clamping region formed below the source region and drain region, respectively,
• (g) a trench formed through the source region,
• (h) a plug formed through the trench, and
• (i) a source tie formed through the trench over the plug.