Trench type non-volatile memory having three storage locations in one memory cell
AssigneeMacronix International Co., Ltd.
InventorChao-I Wu
Life of this patent
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Abstract
A non-volatile memory. The non-volatile memory comprises a substrate, a conductive layer, a charge storage layer, several first doped regions and several second doped regions. The substrate has a plurality of trenches formed therein. The conductive layer is located over the substrate, wherein the conductive layer fills in the trenches. The charge storage layer is located between the substrate and the conductive layer. The first doped regions are located in the substrate adjacent to both sides of the trenches respectively, wherein the first doped regions between the neighboring trenches are separated from each other. The second doped regions are located in a portion of the substrate under the bottoms of the trenches respectively.
Claims16
A non-volatile memory, comprising:
- a substrate having a plurality of trenches formed therein;
- a conductive layer located over the substrate, wherein the conductive layer fills in the trenches;
- a plurality of first doped regions located in the substrate adjacent to both sides of the trenches respectively, wherein the first doped regions between the neighboring trenches are separated from each other;
- a plurality of second doped regions located in a portion of the substrate under the bottoms of the trenches respectively, and
- a charge storage layer located between the substrate and the conductive layer, extending from the bottoms of the trenches, the sidewalls of the trenches, and a surface of the first doped regions to a surface of the substrate separating and directly connecting two adjacent first doped regions of two different cells, so as to form three storage locations in one memory cell.
A non-volatile memory, comprising:
- a substrate having a plurality of trenches formed therein;
- a plurality of first doped regions located in the substrate adjacent to both sides of the trenches respectively, wherein the first doped regions between the neighboring trenches are separated from each other;
- a plurality of second doped regions located in a portion of the substrate under the bottoms of the trenches respectively;
- a charge storage stacked layer made of dielectric materials located over and contacting the bottoms of the trenches, the sidewalls of the trenches, a first surface of the first doped regions and a second surface of the substrate separating and directly connecting two adjacent first doped regions of two different cells;
- and
- a conductive layer directly contacting an entire of the charge storage stacked layer located over and contacting the bottoms of the trenches, the sidewalls of the trenches, the first surface of the first doped regions and the second surface of the substrate separating and directly connecting two adjacent first doped regions of two different cells, so as to form three storage locations in one memory cell.
Dependencies are inferred from the claim text.