Method for processing semiconductor structure and device based on the same

A method for fabricating a device, comprising:

• forming a structure on a substrate, the structure having a lower dielectric layer on the substrate, a metal layer on the lower dielectric layer, an upper dielectric layer on the metal layer, a planarizing layer on the upper dielectric layer, and a layer of photoresist material on the planarizing layer;
• developing the photoresist material according to a mask pattern;
• etching the planarizing layer and the upper dielectric layer according to the mask pattern;
• removing the photoresist material and the planarizing layer upon etching of the planarizing layer and the upper dielectric layer;
• depositing a metal or organic film on the upper dielectric layer and respective exposed portions of the metal layer following etching of the upper dielectric layer;
• removing respective portions of the metal or organic film that are located on one or more portions of the upper dielectric layer, thereby obtaining an inverted mask pattern composed of the metal or organic film;
• and
• etching at least the metal layer and the lower dielectric layer according to the inverted mask pattern.