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US 8,138,045 B2Granted
Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device
AssigneeTexas Instruments Incorporated
InventorsMahalingam Nandakumar, Said Ghneim, Frank Scott Johnson
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Abstract
A method of forming sidewall spacers for a gate in a semiconductor device includes depositing a gate oxide layer over a gate and source/drain regions, and using a thermal anneal to oxidize silicon of the substrate and silicon of the gate after formation of the deposited oxide layer. A sidewall layer is deposited over the oxide layer following the oxidation, and the sidewall layer and oxide layer are patterned to form the sidewall spacers.
Claims8
A method of fabricating a semiconductor device, comprising:
- forming a gate insulator layer over a substrate comprising silicon;
- forming a gate material layer comprising polysilicon over the gate insulator layer;
- patterning the gate material layer and the gate insulator layer to form a gate;
- depositing an oxide layer to cover the gate and portions of the substrate;
- after depositing the oxide layer, oxidizing portions of the covered gate and the portions of the substrate, thereby growing a silicon oxide layer in the materials of the gate and substrate and defining a combined deposited and grown oxide layer;
- forming a sidewall layer over the combined deposited and grown oxide layer covering the gate and the portions of the substrate;
- and
- etching portions of the sidewall layer and of the combined deposited and grown oxide layer to form spacers on sidewalls of the gate.
5 more elements
Dependencies are inferred from the claim text.