Forming an oxide MEMS beam
AssigneeInternational Business Machines Corporation
InventorsJoseph P. Hasselbach, Karen L. Lestage, Anthony K. Stamper
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Abstract
Solutions for forming a semiconductor including an oxide MEMS beam are disclosed. In one embodiment, a method of forming a beam within a sealed cavity includes: depositing a lower insulator layer comprising one or more layers; depositing an upper insulator layer over the first insulator layer, the upper insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer.
Claims22
A method of forming a beam within a sealed cavity, the method comprising:
- depositing a lower insulator layer comprising one or more layers;
- depositing an upper insulator layer over the first insulator layer, the upper insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer;
- forming a first conductor layer below the lower insulator layer and a second conductor layer above the upper insulator layer, wherein each conductor layer comprises one or more metal layers;
- and
- forming a stabilizing insulator layer between at least one of:
- the upper insulator layer and the second conductor or the first conductor and the lower insulator layer, wherein the at least one of the upper insulator layer or the lower insulator layer includes an unstable stress when exposed to ambient.
A method of forming a beam within a sealed cavity, the method comprising:
- depositing a first stabilizing insulator layer;
- depositing an insulator layer above the first stabilizing insulator layer, the insulator layer including an unstable stress when exposed to ambient;
- and
- depositing a second stabilizing insulator layer above the insulator layer, wherein the first stabilizing insulator layer and the second stabilizing insulator layer include a stable stress when exposed to ambient.
A method of forming a beam within a sealed cavity, the method comprising:
- forming a lower conductor layer comprising one or more metal layers;
- depositing an insulator layer above the lower conductor layer;
- and
- forming an upper conductor layer above the insulator layer, the upper conductor layer comprising one or more metal layers, wherein at least one of:
- a stress, a thickness, or a pattern factor of the upper conductor layer is different than a stress, a thickness, or a pattern factor of the lower conductor layer.
Dependencies are inferred from the claim text.