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AssigneesTokuyama Corporation, Tohoku University
InventorsHiroyuki Fukuyama, Kazuya Takada, Akira Hakomori
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In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction. An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
An aluminum nitride single crystal film comprising aluminum nitride single crystal having an area of 15 cm2 or more and a threading dislocation density of 5×10−6 cm−2 or less.
An aluminum single crystal multi-layer substrate having an aluminum nitride single crystal film on the a-plane of single crystal α-alumina as a substrate, wherein a dislocation layer is existent between the both crystals and the aluminum nitride single crystal has a threading dislocation density of 5×106 cm−2 or less.
An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the c-plane of single crystal α-alumina as a substrate, wherein a dislocation layer is existent between the both crystals and the aluminum nitride single crystal has a threading dislocation density of 5×106 cm−2 or less.
Dependencies are inferred from the claim text.