Static random access memory and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorSung Hee Park
Life of this patent
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Abstract
Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.
Claims18
A static random access memory (SRAM), comprising:
- a substrate;
- first and second metal oxide semiconductor (MOS) access transistors on the substrate;
- first and second MOS drive transistors having a ground potential layer as a common source;
- first and second p-channel transistors configured as pull-up devices;
- a power supply potential layer connected to sources of the first and second p-channel transistors, wherein the first and second drive transistors have gates disposed opposite to each other on opposite sides of the power supply potential layer;
- and
- an insulating layer on the substrate, between the ground potential layer and the power supply potential layer, wherein the insulating layer has a lenticular shape, and opposite ends of the insulating layer each have a bird's beak.
Dependencies are inferred from the claim text.