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US 8,134,181 B2Granted
Semiconductor device
AssigneeFurukawa Electric Co., Ltd.
InventorsYoshihiro Sato, Sadahiro Kato, Seikoh Yoshida
Life of this patent
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Abstract
A semiconductor device includes a substrate; a buffer layer; and a compound semiconductor layer laminated on the substrate with the buffer layer in between. The buffer layer has a dislocation density in a plane in parallel to an in-plane direction thereof, so that a volume resistivity of the buffer layer becomes a substantially maximum value.
Claims19
A semiconductor device comprising:
- a substrate;
- a buffer layer;
- and
- a compound semiconductor layer laminated on the substrate with the buffer layer in between, wherein
- a dislocation density of a material of the buffer layer in a plane in parallel to an in-plane direction thereof is selected so that a volume resistivity of the buffer layer is substantially a maximum value with respect to the dislocation density of the material of the buffer layer, and
- wherein the buffer layer has a ratio of a screw dislocation density thereof to the dislocation density less than 0.12.
3 more elements
A semiconductor device comprising:
- a substrate;
- a buffer layer;
- and
- a compound semiconductor layer laminated on the substrate with the buffer layer in between, wherein
- a material for the buffer layer is selected to have a half width of an X-ray rocking curve with respect to a (102) plane thereof, the half width of an X-ray rocking curve with respect to a (102) plane corresponding to the material that forms the buffer layer having a substantially maximum value for a volume resistivity with respect to the half width of the X-ray rocking curve, and
- the buffer layer has a ratio of a screw dislocation density thereof to a dislocation density less than 0.12.
3 more elements
A field effect transistor comprising:
- a substrate;
- a buffer layer;
- and
- a compound semiconductor layer laminated on the substrate with the buffer layer in between, wherein
- a dislocation density of a material of the buffer layer in a plane in parallel to an in-plane direction thereof is selected so that a volume resistivity of the buffer layer is substantially a maximum value with respect to the dislocation density of the material of the buffer layer, and
- the buffer layer is doped with magnesium to have a magnesium concentration not less than 1×1016 cm−3 and not greater than 1×1017 cm−3.
3 more elements
Dependencies are inferred from the claim text.