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US 8,133,779 B2Granted
Method of fabricating a semiconductor device
AssigneeElpida Memory, Inc.
InventorKeisuke Ohtsuka
Life of this patent
Estimating the term…
Abstract
A conductive film is formed to extend from a bottom and a sidewall of a recess formed in an interlayer insulating film onto a top surface of the interlayer insulating film. Dry etching of the conductive film is performed such that a portion of the conductive film remains on the bottom and sidewall of the recess. The dry etching is also performed such that a deposition film is formed on a top portion of the recess.
Claims19
A method of fabricating a semiconductor device, comprising:
- forming an interlayer insulating film;
- forming a recess in the interlayer insulating film;
- forming a conductive film extending from a bottom and a sidewall of the recess onto a top surface of the interlayer insulating film such that a shape of an inner surface of the conductive film conforms with that of the recess;
- and
- selectively removing a portion of the conductive film formed on the top surface of the interlayer insulating film by dry etching such that a portion of the conductive film remains on the bottom and sidewall of the recess,
- wherein the dry etching is performed with forming a deposition film directly onto the inner surface of the conductive film including the bottom of the recess and with leaving a space surrounded by the deposition film in the recess such that a diameter of the space in an upper portion of the recess is smaller than a diameter of the space in a lower portion of the recess.
3 more elements
A method, comprising:
- forming an insulating layer;
- selectively removing the insulating layer to form a hole in the insulating layer;
- forming a conductive film extending from a bottom and a sidewall of the hole onto a top surface of the insulating layer;
- and
- performing a dry etching to remove a portion of the conductive film formed on the top surface of the insulating layer with forming a deposition film onto an inner surface of the hole, the conductive film formed on the bottom of the hole being exposed to the dry etching, a thickness of the deposition film on an upper portion of the hole being larger than a thickness of the deposition film on a lower portion of the hole.
2 more elements
Dependencies are inferred from the claim text.