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US 8,133,766 B2Granted
Fuse of semiconductor device and method of forming the same
AssigneeHynix Semiconductor Inc.
InventorHyung Kyu Kim
Life of this patent
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Abstract
A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse metals are not migrated under conditions, such as specific temperature and specific humidity. Thus, reliability of a semiconductor device can be improved.
Claims7
A method of forming a semiconductor device, comprising:
- forming a plurality of first fuse metal portions comprising a first fuse metal at predetermined intervals over a substrate;
- forming a plurality of second fuse metal portions comprising a second fuse metal in first spaces between the first fuse metal portions;
- exposing a fuse comprising one of the second fuse metal portions to form a blowing region in a second space disposed between the first fuse metal portions, wherein the second space is larger than the first space;
- and
- blowing the fuse so that remainder parts of the fuse remain over sidewalls of the second space;
- wherein the first and second fuse metals are conductive and are different from each other.
3 more elements
Dependencies are inferred from the claim text.