Pattern forming method and apparatus

A pattern forming method comprising:

• preparing a target object in a coating section of an apparatus by forming a resist film on a substrate such that the resist film has a hydrophobic top surface;
• then, performing immersion light exposure on the target object with the resist film having the hydrophobic top surface in an immersion light exposure section of the apparatus by subjecting the resist film to light exposure while immersing the resist film in a liquid, thereby forming a predetermined light exposure pattern on the resist film;
• then, performing a hydrophilic process and a cleaning process at the same time on the target object on a spin chuck in a cleaning section of the apparatus by supplying a dilute acid solution onto the target object with the predetermined light exposure pattern formed on the resist film, the dilute acid solution being perfluoroalkylsulfonic acid having an alkyl long chain (CF2)n of n=1 to 4 and set at a concentration of 10−3 to 10−1N, the hydrophilic process turning the hydrophobic top surface of the resist film into a hydrophilic top surface to be wetted with a development liquid overall;
• then, spinning off the dilute acid solution from the target object by rotating the target object on the spin chuck in the cleaning section of the apparatus;
• then, performing a heating process to promote an acid catalyst reaction for the resist film in a heating section of the apparatus;
• and
• then, performing a development process on the target object with the resist film having the hydrophilic top surface by use of the development liquid in a development section of the apparatus, thereby forming a predetermined resist pattern from the resist film in accordance with the predetermined light exposure pattern.