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US 8,133,547 B2Granted
Photoresist coating composition and method for forming fine contact of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorJae Chang Jung
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Abstract
A coating composition containing a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.
Claims7
A method for forming a fine contact of a semiconductor device, comprising the steps of:
- (a) providing a coating composition comprising a coating base resin comprising poly(t-butylacrylate/methacrylic acid/methacrylate) and a C4-C10 alcohol as a main solvent;
- (b) forming a photoresist film on a semiconductor substrate having an underlying layer;
- (c) patterning the photoresist film to form a first photoresist pattern;
- and
- (d) coating the coating composition along a surface of the first photoresist pattern for contact to form a second photoresist pattern for contact, wherein contact regions of the first photoresist pattern and the second photoresist pattern have predetermined diameters, and a contact region of the second photoresist pattern is smaller than a contact region of the first photoresist pattern.
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Dependencies are inferred from the claim text.