Reducing high-frequency signal loss in substrates
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChewn-Pu Jou, Ho-Hsiang Chen
Life of this patent
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Abstract
An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region.
Claims24
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a deep well region of a second conductivity type opposite the first conductivity type in the semiconductor substrate, wherein the deep well region comprises a plurality of fingers, with portions of the semiconductor substrate extending into spaces between the plurality of fingers, and wherein the plurality of fingers is interconnected to form the deep well region;
- a depletion region in the semiconductor substrate and adjoining the deep well region, wherein the depletion region comprises portions formed by the plurality of fingers, and wherein the portions of the depletion region are overlapped to form a continuous depletion region;
- a voltage source connected to the deep well region, wherein the voltage source is configured to provide a fixed positive voltage to the deep well region;
- and
- an integrated circuit device directly over the depletion region.
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a diode;
- a deep well region in the semiconductor substrate and directly under the diode, wherein the deep well region is of a second conductivity type opposite the first conductivity type;
- a voltage source connected to the deep well region and configured to provide a fixed positive voltage to the deep well region, wherein the fixed positive voltage is selected from the group consisting of a positive power supply voltage of a core circuit and a positive power supply voltage of an input/output circuit;
- and
- a depletion region comprising a first portion directly over the deep well region and a second portion directly under the deep well region, wherein the first portion spaces the deep well region apart from the diode.
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a depletion region in the semiconductor substrate;
- a deep well region substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type, and wherein the depletion region comprises a first portion directly over the deep well region and a second portion directly under the deep well region;
- a voltage source connected to the deep well region, wherein the voltage source is configured to provide a fixed positive voltage to the deep well region, and wherein the fixed positive voltage is selected from the group consisting of a positive power supply voltage of a core circuit and a positive power supply voltage of an input/output circuit;
- and
- an integrated circuit device directly over the depletion region.
Dependencies are inferred from the claim text.