Back to results
US 8,106,594 B2Granted
Semiconductor device and electronic apparatus using the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKiyoshi Kato, Takeshi Osada
Life of this patent
Estimating the term…
Abstract
A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved.
Claims88
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a first P-type transistor;
- a second circuit comprising a second N-type transistor;
- a third circuit comprising a second P-type transistor;
- and
- a fourth circuit comprising a third N-type transistor and a third P-type transistor,
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the first P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein one of a source and a drain of the third N-type transistor is electrically connected to one of a source and a drain of the third P-type transistor,
- wherein the other of the source and the drain of the second N-type transistor and the other of the source and the drain of the third N-type transistor are electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the second P-type transistor and the other of the source and the drain of the third P-type transistor are electrically connected to the high potential power supply,
- wherein a threshold voltage of the second N-type transistor is lower than that of the first N-type transistor,
- wherein a threshold voltage of the third N-type transistor is lower than that of the first N-type transistor,
- wherein a first signal is inputted to a gate of the second N-type transistor and a gate of the third N-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the first P-type transistor.
16 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a P-type transistor;
- and
- a second circuit comprising a second N-type transistor;
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the second N-type transistor is electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the P-type transistor is electrically connected to the high potential power supply,
- wherein a threshold voltage of the second N-type transistor is lower than that of the first N-type transistor,
- wherein a first signal is inputted to a gate of the second N-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the P- type transistor.
11 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a first P-type transistor;
- a second circuit comprising a second N-type transistor;
- a third circuit comprising a second P-type transistor;
- and
- a fourth circuit comprising a third N-type transistor and a third P-type transistor;
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the first P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein one of a source and a drain of the third N-type transistor is electrically connected to one of a source and a drain of the third P-type transistor,
- wherein the other of the source and the drain of the second N-type transistor and the other of the source and the drain of the third N-type transistor are electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the second P-type transistor and the other of the source and the drain of the third P-type transistor are electrically connected to the high potential power supply,
- wherein a threshold voltage of the second P-type transistor is higher than that of the first P-type transistor,
- wherein a threshold voltage of the third P-type transistor is higher than that of the first P-type transistor,
- wherein a first signal is inputted to a gate of the second P-type transistor and a gate of the third P-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the first P- type transistor.
16 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising an N-type transistor and a first P-type transistor;
- and
- a second circuit comprising a second P-type transistor,
- wherein one of a source and a drain of the first P-type transistor is electrically connected to one of a source and a drain of the N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein the other of the source and the drain of the second P-type transistor is electrically connected to the high potential power supply,
- wherein the other of the source and the drain of the N-type transistor is electrically connected to the low potential power supply,
- wherein a threshold voltage of the second P-type transistor is higher than that of the first P-type transistor,
- wherein a first signal is inputted to a gate of the second P-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the N-type transistor and the one of the source and the drain of the first P-type transistor.
11 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a first P-type transistor;
- a second circuit comprising a second N-type transistor;
- a third circuit comprising a second P-type transistor;
- and
- a fourth circuit comprising a third N-type transistor and a third P-type transistor,
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the first P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein one of a source and a drain of the third N-type transistor is electrically connected to one of a source and a drain of the third P-type transistor,
- wherein the other of the source and the drain of the second N-type transistor and the other of the source and the drain of the third N-type transistor are electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the second P-type transistor and the other of the source and the drain of the third P-type transistor are electrically connected to the high potential power supply,
- wherein a channel length of the second N-type transistor is shorter than that of the first N-type transistor,
- wherein a channel length of the third N-type transistor is shorter than that of the first N-type transistor,
- wherein a first signal is inputted to a gate of the second N-type transistor and a gate of the third N-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the first P- type transistor.
16 more elements
The semiconductor device according to 45, wherein the semiconductor device is incorporated into an electronic apparatus selected from the group consisting of a mobile phone, a PDA, an electronic notebook, a portable game machine, a TV, a display, a digital camera, a digital video camera, a car audio set, a home game machine, and IC card.
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a P-type transistor;
- and
- a second circuit comprising a second N-type transistor;
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the second N-type transistor is electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the P-type transistor is electrically connected to the high potential power supply,
- wherein a channel length of the second N-type transistor is shorter than that of the first N-type transistor,
- wherein a first signal is inputted to a gate of the second N-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the P-type transistor.
11 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising a first N-type transistor and a first P-type transistor;
- a second circuit comprising a second N-type transistor;
- a third circuit comprising a second P-type transistor;
- and
- a fourth circuit comprising a third N-type transistor and a third P-type transistor;
- wherein one of a source and a drain of the first N-type transistor is electrically connected to one of a source and a drain of the first P-type transistor,
- wherein the other of the source and the drain of the first N-type transistor is electrically connected to one of a source and a drain of the second N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein one of a source and a drain of the third N-type transistor is electrically connected to one of a source and a drain of the third P-type transistor,
- wherein the other of the source and the drain of the second N-type transistor and the other of the source and the drain of the third N-type transistor are electrically connected to the low potential power supply,
- wherein the other of the source and the drain of the second P-type transistor and the other of the source and the drain of the third P-type transistor are electrically connected to the high potential power supply,
- wherein a channel length of the second P-type transistors is shorter than that of the first P-type transistor,
- wherein a channel length of the third P-type transistor is shorter than that of the first P-type transistor,
- wherein a first signal is inputted to a gate of the second P-type transistor and a gate of the third P-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the first N-type transistor and the one of the source and the drain of the first P-type transistor.
16 more elements
A semiconductor device comprising:
- a low potential power supply;
- a high potential power supply;
- and
- a voltage controlled oscillator, the voltage controlled oscillator comprising:
- a first circuit comprising an N-type transistor and a first P-type transistor;
- and
- a second circuit comprising a second P-type transistor,
- wherein one of a source and a drain of the first P-type transistor is electrically connected to one of a source and a drain of the N-type transistor,
- wherein the other of the source and the drain of the first P-type transistor is electrically connected to one of a source and a drain of the second P-type transistor,
- wherein the other of the source and the drain of the second P-type transistor is electrically connected to the high potential power supply,
- wherein the other of the source and the drain of the N-type transistor is electrically connected to the low potential power supply,
- wherein a channel length of the second P-type transistor is shorter than that of the first P-type transistor,
- wherein a first signal is inputted to a gate of the second P-type transistor, and
- wherein a second signal is outputted from the one of the source and the drain of the N-type transistor and the one of the source and the drain of the first P-type transistor.
11 more elements
Dependencies are inferred from the claim text.