Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure

A method for selectively permeating a self-assembled block copolymer, comprising:

• applying a block copolymer comprising a hydrophilic polymer and a hydrophobic polymer in at least one trench in a dielectric material;
• inducing phase separation in the block copolymer to form a plurality of domains comprising the hydrophilic polymer within the at least one trench surrounded by a matrix comprising the hydrophobic polymer;
• contacting the plurality of domains with a swelling agent comprising at least one metal oxide precursor to selectively permeate the plurality of domains;
• and
• exposing the plurality of domains to an oxidizing agent to convert the at least one metal oxide precursor to a metal oxide.

A method of forming a metal oxide pattern on a substrate, comprising:

• applying a block copolymer material over at least one trench in a dielectric material, the block copolymer material comprising at least one hydrophilic polymer and at least one hydrophobic polymer;
• annealing the block copolymer material to form a plurality of structural units laterally aligned with the at least one trench and comprising the at least one hydrophilic polymer, the plurality of structural units disposed within a matrix comprising the at least one hydrophobic polymer;
• applying a swelling agent comprising a metal oxide precursor to the plurality of structural units to form a plurality of metal oxide precursor-impregnated structural units;
• exposing the metal oxide precursor-impregnated structural units to at least one oxidizing agent to oxidize the metal oxide precursor;
• and
• removing the matrix to form a pattern of metal oxide structures.

A method of patterning a semiconductor structure, comprising:

• applying a copolymer material comprising at least two substantially immiscible polymeric blocks over at least one trench in a material overlying a substrate;
• annealing the copolymer material to form a plurality of domains aligned with one another within the at least one trench, each of the domains comprising at least one of the polymeric blocks;
• exposing the plurality of domains to a swelling agent comprising at least one metal oxide precursor;
• oxidizing the at least one metal oxide precursor to form a plurality of metal oxide structures;
• and
• selectively removing the material overlying the substrate with respect to the metal oxide structures of the plurality.

A method of forming metal oxide structures, comprising:

• applying a material comprising at least two polymeric blocks that are substantially immiscible with one another over at least one trench in a material overlying a substrate;
• annealing the material to form a film comprising repeating domains comprising at least one of the polymeric blocks surrounded by a matrix comprising at least another of the polymeric blocks;
• exposing the film to a swelling agent comprising titanium tetraisopropoxide;
• and
• oxidizing the titanium tetraisopropoxide to form titanium dioxide.