Gate valve and semiconductor manufacturing apparatus

A gate valve of a semiconductor manufacturing apparatus, which is arranged between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, the gate valve comprising:

• a first gate valve at a side of the processing chamber which opens and closes an opening of the processing chamber, the first gate valve including a first valve body and a first valve box, the first valve box including a first opening facing the opening of the processing chamber;
• a first sealing member which is attached to the first valve body of the first gate valve and seals a clearance between the first opening and the first valve body;
• a second gate valve at the side of the transfer chamber which opens and closes an opening of the transfer chamber, the second gate valve including a second valve body and a second valve box, the second valve box including a second opening facing the opening of the transfer chamber;
• and
• a second sealing member which is attached to a second valve body of the second gate valve and seals a clearance between the second opening and the second valve body,
• wherein the first and second gate valves are attached to each other such a manner that the substrate can be transferred from the transfer chamber into the processing chamber or vice versa through the first and second openings, and a thermal insulator is inserted between the first and second gate valves to suppress heat transfer from the first gate valve to the second gate valve, and
• wherein the first sealing member is formed of a first material and the second sealing member is formed of a second material having material properties different from the first material in terms of vacuum sealability and resistance to an atmosphere of the processing chamber.