Electron device using oxide semiconductor and method of manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorsRyo Hayashi, Masafumi Sano
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Abstract
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
Claims1
A method of manufacturing an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, the method comprising:
- a first step of forming a metal oxide layer;
- and
- a second step of forming the semiconductor region by making a part of the metal oxide layer to have low resistance
- wherein the second step includes a step of implanting a hydrogen ion to a part of the metal oxide layer.
Dependencies are inferred from the claim text.