Method and system for correcting a mask pattern design

A computer-implemented method of correcting a mask pattern design, the method comprising:

• preparing, by a computer, a desired pattern and a mask pattern to form a first transferred/formed pattern corresponding to the desired pattern on a substrate, the mask pattern comprising an edge;
• generating, by the computer, a plurality of edges by dividing the edge of the mask pattern by a predetermined length;
• defining a correction point on the plurality of edges to generate a plurality of correction points;
• computing, by the computer, a correction quantity in consideration of the proximity effect for the plurality of correction points to generate a plurality of correction quantities;
• forming, by the computer, a correction mask pattern by moving the plurality of edges according to the plurality of correction quantities, the correction mask pattern comprising an edge;
• defining at least one evaluation point on the edge of the correction mask pattern;
• defining at least one process parameter to form a second transferred/formed pattern which is either a resist pattern formed on the substrate by using the correction mask pattern or a pattern formed on the substrate by using the resist patterns as a mask;
• defining a reference value and a variable range for the at least one process parameter;
• generating, by the computer, a combination of parameter values by varying the at least one process parameter within the variable range;
• computing, by the computer, a positional displacement for the combination of the parameter values to generate a plurality of positional displacements, wherein the positional displacement is a positional displacement between at least one first point on the second transferred/formed pattern and the at least one evaluation point, wherein the at least first point corresponds to the at least one evaluation point, and wherein the combination of the parameter values provide an asymmetric distribution of positional displacements relative to the desired pattern;
• computing, by the computer, a statistic of the plurality of positional displacements;
• outputting, by the computer, information to modify the mask pattern according to the statistic;
• comparing the standard deviation of the positional displacements and a third predefined range;
• outputting, by the computer, information to modify the desired pattern provided in a case where the standard deviation of the positional displacements is out of the third predefined range;
• or
• comparing the mode of the positional displacements and a fourth predefined range provided in a case where the standard deviation of the positional displacements is within the third predefined range;
• and
• outputting, by the computer, information to modify the correction mask pattern provided in a case where the mode of the positional displacements is greater than the fourth predefined range.

A system of correcting a mask pattern design, the method comprising:

• a storing section configured to store a desired pattern and a mask pattern to form a first transferred/formed pattern corresponding to the desired pattern on a substrate, the mask pattern comprising an edge;
• a dividing section configured to generate a plurality of edges by dividing the edge of the mask pattern by a predetermined length;
• a correction point defining section configured to define a correction point on the plurality of edges to generate a plurality of correction points;
• a correction quantity computing section configured to compute a correction quantity, taking the proximity effect into consideration, for the plurality of correction points to generate a plurality of correction quantities;
• a forming section configured to form a correction mask pattern by deforming the mask pattern according to the plurality of correction quantities, the correction mask pattern comprising an edge;
• an evaluation point defining section configured to define at least one evaluation point on the edge of the correction mask pattern;
• a process parameter defining section configured to define at least one process parameter to form a second transferred/formed pattern which is either a resist pattern formed on the substrate by using the correction mask pattern or a pattern formed on the substrate by using the resist patterns as a mask;
• a reference value and a variable range defining section configured to define a reference value and a variable range for the at least one process parameter;
• a combination of parameter values generating section configured to generate a combination of parameter values by varying the at least one process parameter within the variable range;
• a positional displacement computing section configured to compute a positional displacement for the combination of the parameter values to generate a plurality of positional displacements, wherein the positional displacement is a positional displacement between at least one first point on the second transferred/formed pattern and the at least one evaluation point, and wherein the at least first point corresponds to the at least one evaluation point;
• a statistic computing section configured to compute a statistic of the plurality of positional displacements;
• an outputting section configured to output information to modify the mask pattern according to the statistic;
• a comparing section configured to compare the standard deviation of the positional displacements and a first predefined range;
• a changing section configured to change the desired pattern provided in a case where the standard deviation of the positional displacement is out of the first predefined range;
• a comparing section configured to compare the average of the positional displacements and a second predefined range provided in a case where the standard deviation of the positional displacements is within the first predefined range;
• and
• an outputting section configured to output information to modify the correction mask pattern provided in a case where the average of the positional displacements is out of the second predefined range.