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US 8,076,754 B2Granted
Silicide-interface polysilicon resistor
AssigneeSilicon Laboratories Inc.
InventorsSteven G. Young, David M. Szmyd
Life of this patent
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Abstract
A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.
Claims10
A resistor comprising:
- a substrate;
- an oxide layer located on top of said substrate;
- a polysilicon layer located on top of said oxide layer, wherein said polysilicon layer includes a plurality of semiconductor junctions;
- and a plurality of silicide sheets located on top of said polysilicon layer, wherein at least one of said silicide sheets straddles across two of said semiconductor junctions within said polysilicon layer.
1 more element
A method for manufacturing a resistor, said method comprising:
- depositing an oxide layer on top of a substrate;
- depositing a polysilicon layer on top of said oxide layer, wherein said polysilicon layer includes a plurality of semiconductor junctions, wherein one of said semiconductor junctions is formed by one N+ doped region and one P+ doped region;
- and
- forming a silicide sheet that straddles across two of said semiconductor junctions located within said polysilicon layer.
1 more element
Dependencies are inferred from the claim text.