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US 8,076,672 B2Granted
Passivation structure with voltage equalizing loops
AssigneeInternational Rectifier Corporation
InventorNiraj Ranjan
Life of this patent
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Abstract
A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first closed loop, a continuous strip that loops around the first closed loop without crossing itself which crosses itself a second time to form a second closed loop.
Claims19
A semiconductor device comprising:
- a semiconductive body having an active region formed therein;
- a continuous strip of polysilicon looping around said active region multiple times without crossing itself and including multiple PN junctions formed in series therein;
- and
- an electrically conductive layer formed over the polysilicon between said multiple PN junctions and shorting the same to reduce the capacitance thereof.
1 more element
A semiconductor device comprising:
- a semiconductive body having an active region formed therein;
- a single continuous strip of resistive material forming a plurality of substantially concentric loops that spiral around said active region without crossing itself;
- at least one PN junction formed in said single continuous strip among said plurality of substantially concentric loops;
- and
- an electrically conductive layer formed over said single continuous strip between said at least one PN junction and shorting the same to reduce the capacitance thereof.
2 more elements
Dependencies are inferred from the claim text.