Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• forming a gate insulating film on a semiconductor substrate;
• forming a gate electrode on the gate insulating film;
• implanting arsenic ions into the semiconductor substrate using the gate electrode as a mask;
• forming sidewall spacers on side surfaces of the gate electrode and the gate insulating film, the sidewall spacers having a first insulating film containing oxygen atoms, and a second insulating film containing nitrogen atoms;
• implanting phosphorus ions into the semiconductor substrate using the gate electrode as a mask;
• treating the semiconductor substrate by an annealing process after implanting the arsenic ions and the phosphorus ions;
• and
• forming an interlevel insulating film over the gate electrode and the semiconductor substrate after the annealing process,
• wherein the annealing process includes:
• placing the semiconductor substrate on a substrate stage, in which a heat source having first and second heaters is provided, such that the first heater faces a first area assigned at a central part of the semiconductor substrate and the second heater faces a second area assigned at a peripheral part of the semiconductor substrate, a temperature of each of the first and second heaters being independently controlled;
• individually preheating the central part by the first heater and the peripheral part by the second heater;
• and
• irradiating an entire top surface of the semiconductor substrate with a pulsed light at a pulse width of about 0.1 ms to about 100 ms, in synchronization with the preheating.