Back to results
US 8,076,213 B2Granted
Method for fabricating a metal-insulator-metal capacitor
AssigneeUnited Microelectronics Corp.
InventorsLian-Hua Shih, Yi-Ching Wu, Jiann-Fu Chen, Ming-Te Chen, Chin-Jen Cheng
Life of this patent
Estimating the term…
Abstract
A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.
Claims11
A method for fabricating a metal-insulator-metal (MIM) capacitor comprising:
- providing a substrate comprising a bottom electrode;
- forming a dielectric layer positioned on the bottom electrode, the dielectric layer comprising a silicon nitride film, the silicon nitride film having a plurality of Si—H bonds and a plurality of N—H bonds, a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5;
- and
- forming a top electrode positioned on the dielectric layer.
1 more element
Dependencies are inferred from the claim text.