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US 8,076,206 B2Granted
Method for manufacturing SONOS flash memory
AssigneeSpansion LLC
InventorMasahiko Higashi
Life of this patent
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Abstract
A method for manufacturing a semiconductor device which includes steps of forming a dummy layer on a semiconductor substrate, forming a groove 12 in the semiconductor substrate while using the dummy layer as a mask, forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer, eliminating the trap layer formed above the upper surface and at the sides of the dummy layer, and forming a top insulating film to cover a remaining trap layer and the exposed tunnel insulating film.
Claims10
A method for manufacturing a semiconductor device comprising:
- forming a dummy layer on a semiconductor substrate;
- forming a groove in the semiconductor substrate while using the dummy layer as a mask;
- forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer;
- forming a bury layer in the groove and over the trap layer, wherein portions of the trap layer formed over sides of the dummy layer are exposed;
- eliminating the trap layer formed above an upper surface of the dummy layer, and at sides of the dummy layer;
- and
- forming a top insulating film to cover a remaining trap layer and an exposed tunnel insulating film.
4 more elements
Dependencies are inferred from the claim text.