Polishing slurry and polishing method
AssigneeHitachi Chemical Company, Ltd.
InventorsNaoyuki Koyama, Youichi Machii, Masato Yoshida, Masato Fukasawa, Toranosuke Ashizawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi Chemical Company, Ltd.
InventorsNaoyuki Koyama, Youichi Machii, Masato Yoshida, Masato Fukasawa, Toranosuke Ashizawa
Estimating the term…
A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.
A polishing slurry for polishing an inorganic insulating film containing a slurry in which particles are dispersed in a medium and an additive, wherein
Dependencies are inferred from the claim text.