Nanoelectronic structure and method of producing such
AssigneeQuNano AB
InventorsLars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Claims15
A method of fabricating a semiconductor device, comprising:
- (a) providing a semiconductor substrate;
- (b) growing from a first surface of the substrate a semiconductor nanowire protruding from said first surface of the substrate;
- and
- (c) epitaxially growing on the semiconductor nanowire in axial and radial directions with respect to the semiconductor nanowire a semiconductor volume element that is epitaxially connected to the semiconductor nanowire, wherein the semiconductor nanowire and the volume element form a funnel structure protruding from the first surface of the substrate,
- wherein the semiconductor nanoelement is oriented upstanding from a substrate and a difference between a diameter of the semiconductor volume element and a diameter of the semiconductor nanoelement is in a range of 300 nm to 500 nm.
Dependencies are inferred from the claim text.