Nanoelectronic structure and method of producing such
AssigneeQuNano AB
InventorsLars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Claims33
A semiconductor device comprising a funnel structure comprising:
- a) an essentially one dimensional semiconductor nanoelement, and
- b) a semiconductor volume element having a larger diameter than the nanoelement, the volume element of the funnel structure comprises a doped semiconductor in epitaxial connection with the nanoelement of the funnel structure, an outer surface of the volume element provides a surface for electrically accessing the nanoelement, wherein the volume element does not enclose at least a first portion of a circumferential surface of the nanoelement,
- wherein the semiconductor nanoelement is oriented upstanding from a substrate and a difference between a diameter of the semiconductor volume element and a diameter of the semiconductor nanoelement is in a range of 300 nm to 500 nm.
Dependencies are inferred from the claim text.