Method for correcting layout with pitch change section
AssigneeHynix Semiconductor Inc.
InventorChan Ha Park
Life of this patent
Estimating the term…
Abstract
A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.
Claims10
A method for correcting a layout with a pitch change section, comprising:
- preparing a pattern layout disposed to cause line-and-space type first patterns disposed at a first pitch and line-and-space type second patterns disposed at a second pitch to be connected respectively in a pitch change section;
- obtaining a profile distribution data of a pattern image by performing a pattern transfer simulation on the pattern layout by using a computer;
- extracting the profile distribution of the pattern image for the first pattern at any one measuring point within the pitch change section and another reference point outside of the pitch change section from the profile distribution data of the pattern image by using a computer;
- extracting a difference between the profile distribution at the measuring point and the profile distribution at the reference point;
- modifying the pattern layout by adding and reducing a line width of a space part of the first pattern within the pitch change section to compensate the difference between the profile distributions;
- extracting the profile distribution of the pattern image for the first pattern part in which the line width is changed by performing a second pattern transfer simulation on the modified pattern layout by using a computer;
- and
- determining whether an additional line-width correction of the first pattern part is performed or not by confirming whether the profile distribution of the pattern image for the extracted first pattern part exists within an allowable range.
A method for correcting a layout with a pitch change section, comprising:
- preparing a pattern layout disposed to cause line-and-space type first patterns disposed at a first pitch and line-and-space type second patterns disposed at a second pitch different from the first pitch to be connected respectively in a pitch change section;
- obtaining a light intensity profile distribution data of a pattern image by performing a pattern transfer simulation on the pattern layout by using a computer;
- extracting the light intensity profile distribution values for the first pattern at any one measuring point within the pitch change section and another reference point outside of the pitch change section from the light intensity profile distribution data of the pattern image by using a computer;
- extracting a difference between the profile distribution at the measuring point and the profile distribution at the reference point;
- modifying the pattern layout by reducing a line width of a space part of the first pattern within the pitch change section to compensate the difference between the profile distributions;
- extracting the light intensity profile distribution of the pattern image for the first pattern part in which the line width is changed by performing a second pattern transfer simulation on the modified pattern layout by using a computer;
- and
- determining whether an additional line-width correction of the first pattern part is performed or not by confirming whether the profile distribution of the pattern image for the extracted first pattern part exists within an allowable range of light intensity.
A method for correcting a layout with a pitch change section, comprising:
- preparing a pattern layout disposed to cause line-and-space type first patterns disposed at a first pitch and line-and-space type second patterns disposed at a second pitch different from the first pitch to be connected respectively in a pitch change section;
- obtaining a light intensity profile distribution data of a pattern image by performing a pattern transfer simulation on the pattern layout by using a computer;
- extracting the light intensity profile distribution values for the first pattern at any one measuring point within the pitch change section and another reference point outside of the pitch change section from the light intensity profile distribution data of the pattern image by using a computer;
- extracting a difference between the profile distribution at the measuring point and the profile distribution at the reference point;
- modifying the pattern layout by separating the first pattern from the second pattern to compensate the difference between the profile distributions;
- extracting the light intensity profile distribution in the separated part by performing a second pattern transfer simulation on the modified pattern layout by using a computer;
- and
- determining whether an additional line-width correction of the first pattern part is performed or not by confirming whether the profile distribution of the pattern image for the extracted first pattern part exists within an allowable range of light intensity.
Dependencies are inferred from the claim text.