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US 8,046,722 B2Granted
Method for correcting a mask pattern, system for correcting a mask pattern, program, method for manufacturing a photomask and method for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsToshiya Kotani, Satoshi Tanaka, Soichi Inoue
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Abstract
A computer implemented method for correcting a mask pattern includes: predicting a displacement of a device pattern by using a mask pattern to form the device pattern and a variation of a process condition; determinating an optical proximity correction value so that the displacement falls within a displacement tolerance of the device pattern; and correcting the mask pattern using the optical proximity correction value.
Claims14
A method of manufacturing a photomask comprising:
- predicting a plurality of displacements of a device pattern by using a mask pattern to form the device pattern and variations of a plurality of process conditions, respectively;
- weighting the plurality of displacements, respectively;
- calculating an average of the plurality of weighted displacements;
- determining an optical proximity correction value so that the average falls within a displacement tolerance of the device pattern;
- correcting the mask pattern using the optical proximity correction value;
- and
- forming the corrected mask pattern on a mask substrate.
4 more elements
A method for manufacturing a semiconductor device comprising:
- predicting a plurality of displacements of a device pattern by using a mask pattern to form the device pattern and variations of a plurality of process conditions, respectively;
- weighting the plurality of displacements, respectively;
- calculating an average of the plurality of weighted displacements;
- determining an optical proximity correction value so that the average falls within a displacement tolerance of the device pattern;
- correcting the mask pattern using the optical proximity correction value;
- and
- transferring the corrected mask pattern to the semiconductor wafer using a mask substrate on which the corrected mask pattern is formed.
4 more elements
Dependencies are inferred from the claim text.