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US 8,044,491 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsRyotaro Yagi, Yuichi Nakao, Isamu Nishimura
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Abstract
The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.
Claims9
A semiconductor device comprising:
- an interlayer insulating film on a semiconductor substrate;
- a trench formed in a surface layer portion of said interlayer insulating film;
- a lower electrode embedded in said trench;
- a capacitance film laminated directly on said interlayer insulating film and said lower electrode;
- an upper electrode formed on said capacitance film and having an outline smaller than that of said lower electrode in plan view;
- and
- a protective film formed on said upper electrode;
- wherein said capacitance film is relatively thick at a portion under said upper electrode and relatively thin at a portion of outside of said upper electrode in plan view, and
- said protective film is thicker than a thickness of said relatively thin portion of said capacitance film.
6 more elements
Dependencies are inferred from the claim text.