Semiconductor device including fuse
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-woo Shin, Byung-lyul Park, Jong-myeong Lee, Gil-heyun Choi, Jong-ho Yun
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AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-woo Shin, Byung-lyul Park, Jong-myeong Lee, Gil-heyun Choi, Jong-ho Yun
Estimating the term…
Provided is a semiconductor device including a fuse, in which a insulating layer surrounding the fuse or metal wiring is prevented from being damaged due to the cut of a fuse, which can occur when a repair process is performed. The semiconductor device includes a conductive line formed on a semiconductor layer, a protective layer formed on the conductive line, one or more fuses that are electrically connected to the conductive line, and a fuse protective layer formed on the one or more fuses, and spaced apart from the protective layer.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.
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Fuses, i.e. interconnections changeable from conductive to non-conductive: changeable by the use of an external beam, e.g. laser beam or ion beam
Manufacture or treatment: with simultaneous manufacture of the peripheral circuit region and memory cells
Dynamic random access memory [DRAM] devices: peripheral circuit region structures
Generic packages, interconnections, connectors or other constructional details of devices covered by
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This application claims the benefit of Korean Patent Application No. 10-2009-0008850, filed on Feb. 4, 2009, the disclosure of which is hereby incorporated by reference herein in its entirety.
(i) Technical Field
The present disclosure relates to a semiconductor device, and more particularly, to a semiconductor device including a fuse.
Exemplary embodiments of the present invention can be more understood from the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is an arrangement plan view that schematically illustrates main elements of a semiconductor device according to an exemplary embodiment of the present invention;
FIG. 2 is a cross-sectional view of a semiconductor device including one or more fuses, according to an exemplary embodiment of the present invention;
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. However, exemplary embodiments are not limited to the embodiments illustrated hereinafter, and the embodiments herein are rather introduced to provide easy and complete understanding of the scope and spirit of exemplary embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.
It will be understood that when an element, such as a layer, a region, or a substrate, is referred to as being “on,” “connected to” or “coupled to” another element, it may be directly on, connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like reference numerals refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that, although the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments.