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US 8,043,979 B2Granted
Plasma oxidizing method, storage medium, and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakashi Kobayashi, Junichi Kitagawa, Yoshiro Kabe, Toshihiko Shiozawa
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Abstract
A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.
Claims5
A plasma oxidizing method comprising:
- loading an object to be processed, which has a silicon surface having a pattern of prominences and depressions, into a processing chamber of a plasma processing apparatus;
- heating the object;
- forming a plasma in the processing chamber;
- and
- forming a silicon oxide film by oxidizing the silicon surface of the object by using the plasma,
- wherein the object is heated to a temperature ranging from 200° C. to 800° C. when the silicon oxide film is formed,
- wherein the plasma is formed under a high pressure and high oxygen condition that a proportion of oxygen in a processing gas is 20% to 100% and a processing pressure ranges from 400 Pa to 1,333 Pa, and
- wherein the pattern of the object includes sparse and dense portions having sparse and dense prominences and depressions.
5 more elements
Dependencies are inferred from the claim text.