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US 8,043,920 B2Granted
finFETS and methods of making same
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Thomas Safron Kanarsky, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park, Zhibin Ren, Xinhui Wang, Haizhou Yin
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Abstract
A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.
Claims12
A method, comprising:
- (a) forming two or more silicon fins on a top surface of an insulating layer on a silicon substrate, each fin of said two or more fins having a central region between and abutting first and second end regions and opposite sides;
- (b) forming a gate dielectric layer on said opposite sides of each fin of said two or more fins;
- (c) forming an electrically conductive gate over said gate dielectric layer over said central region of each fin of said of two or more fins;
- (d) removing said gate dielectric layer from said first and second end regions of each fin of said two or more fin and removing said end regions of each of said two or more fins to form exposed opposite first and second ends of said central regions of each fin of said two or more fins;
- after (d), (e) removing said insulating layer to expose first and second regions of said substrate on opposite sides of said gate;
- and
- after (e), (f) simultaneously growing epitaxial silicon from said first and second regions of said substrate and from said first and second ends of said central regions of each fin of said two or more fins to form respective first and second merged source/drains.
4 more elements
Dependencies are inferred from the claim text.