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US 8,043,916 B2Granted
Method of fabricating semiconductor device having multiple gate insulating layer
AssigneeSamsung Electronics Co., Ltd.
InventorChan-Sik Park
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Abstract
A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.
Claims10
A method of fabricating a semiconductor device, comprising:
- preparing a semiconductor substrate having first active region and second active region;
- forming a mask layer pattern on the second region,
- wherein the mask layer pattern comprises:
- a first silicon oxide layer;
- and
- a silicon nitride layer on the silicon oxide layer;
- forming an oxidation retarding layer on the first active region of a surface of the semiconductor substrate;
- removing the mask layer pattern;
- and
- forming a second silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from each other on the first active region and the second active region.
7 more elements
Dependencies are inferred from the claim text.