Atomic layer deposition processes for non-volatile memory devices

A method for fabricating a non-volatile memory device on a substrate, comprising:

• depositing a first polysilicon layer on a substrate surface;
• depositing a silicon oxide layer on the first polysilicon layer;
• depositing a first silicon oxynitride layer on the silicon oxide layer;
• depositing a silicon nitride layer on the first silicon oxynitride layer;
• depositing a second silicon oxynitride layer on the silicon nitride layer;
• and
• depositing a second polysilicon layer on the second silicon oxynitride layer, wherein the depositing the second silicon oxynitride layer further comprises:
• depositing a silicon oxide material on the silicon nitride layer;
• heating the substrate containing the silicon oxide material to a temperature of about 900° C. or higher during a post deposition annealing process;
• implanting nitrogen into the silicon oxide material during a plasma nitridation process;
• and
• heating the substrate containing the silicon oxide material implanted with the nitrogen to a temperature of about 900° C. or higher during a post nitridation annealing process.