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US 8,026,517 B2Granted
Semiconductor structures
AssigneeIndustrial Technology Research Institute
InventorsKuo-Chuang Chiu, Tzer-Shen Lin
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.
Claims7
A semiconductor structure, comprising:
- a polycrystal substrate;
- a first single crystal layer directly formed on the polycrystal substrate;
- and
- a second single crystal layer formed on the first single crystal layer;
- wherein a variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%;
- wherein the polycrystal substrate comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.
3 more elements
Dependencies are inferred from the claim text.