Semiconductor device and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorMitsuhiro Horikawa
Life of this patent
Estimating the term…
Abstract
Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.
Claims8
A method of manufacturing a semiconductor device having a capacitor, where the capacitor is made by the method comprising the steps of:
- laminating a bottom metal electrode, a capacitive insulating film on the bottom metal electrode, and an upper metal electrode on the capacitive insulating film,
- wherein the step of laminating the capacitive insulating film includes a first step of laminating a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, and a second step of laminating a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, and wherein a maximum temperature at which the first dielectric layer is laminated in the first step is lower than a temperature at which the second dielectric layer is laminated in the second step.
Dependencies are inferred from the claim text.