Mask blank and method for manufacturing transfer mask
AssigneeHoya Corporation
InventorMasahiro Hashimoto
Life of this patent
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Abstract
To provide a mask blank which can eliminate pattern defects by preventing a resist pattern from disappearing at the time of manufacturing a transfer mask in semiconductor design rule (DRAM hp65 nm or below), and to provide a mask. A mask blank including a thin film for forming a mask pattern, the thin film being formed on a substrate, and a resist film formed over the thin film, wherein the thin film and the resist film sandwich an adhesion layer that is bonded to the thin film and the resist film, and the adhesion layer prevents, during development of the resist film in patterning of the resist film, collapse of the patterned resist film.
Claims19
A mask blank, comprising:
- a substrate,
- a thin film for forming a mask pattern, the thin film being formed on the substrate,
- a resist film formed over the thin film, and
- an adhesion layer that is bonded to the thin film and the resist film,
- wherein the adhesion layer is a resin film resistant to a developer that is used in development,
- wherein the adhesion layer has a film thickness of 1 nm or more and 30 nm or less.
A mask blank, comprising:
- a substrate,
- a thin film formed on the substrate,
- a resist film formed over the thin film, and
- an intermediate layer formed between the thin film and the resist film, the intermediate layer preventing collapse of a resist pattern formed in the resist film,
- wherein the intermediate layer is made of a resin film that is insoluble in a developer for forming the resist pattern in the resist film,
- wherein the intermediate layer has a film thickness of 1 nm or more and 30 nm or less.
A method for producing a transfer mask, comprising:
- preparing a mask blank including a thin film for forming a mask pattern, an intermediate layer for covering the thin film at least in a region where the mask pattern is formed, and a resist pattern formed on the intermediate layer;
- and
- sequentially patterning the intermediate layer and the thin film with the resist pattern serving as a mask,
- wherein the intermediate layer is made of a resin film that is insoluble in a developer for forming the resist pattern in the resist film,
- wherein the intermediate layer has a film thickness of 1 nm or more and 30 nm or less.
Dependencies are inferred from the claim text.