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US 8,025,808 B2Granted
Methods for machine ceramics
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsRonald W. Laconto, Douglas E. Ward
Life of this patent
Estimating the term…
Abstract
A method for machining a ceramic substrate containing Al, including providing a solution containing a phosphorus compound on the ceramic substrate; and machining the substrate with an abrasive.
Claims17
A method for machining a ceramic substrate containing Al, comprising:
- providing a solution containing a phosphorus compound in direct contact with the ceramic of the ceramic substrate, the ceramic of the ceramic substrate comprising Al, the phosphorus compound being an organophosphorus compound, abrasive particles present in the solution as free abrasives, forming a slurry;
- and
- machining the substrate with the abrasive particles, wherein a ratio MRRadd/MRRcon is not less than 1.2, where MRRadd is the material removal rate of polishing the substrate with said slurry comprising the abrasive and the organophosphorus compound, and where MRRcon is a material removal rate under identical process conditions with a control slurry free of the organophosphorus compound;
- wherein the organophosphorus compound is selected from the group consisting of hydroxy phosphono acetic acid, aminotri-(methylenephosphonic acid), hexapotassiumhexamethylenediaminetetra-(methylenephosphonic acid), 2-phosphonobutane-1,2,4-tricarboxylic acid, phosphate acid ester of ethoxylated phenol, and hydroxyethylidinediphosphonic acid.
1 more element
A method for machining a substrate, comprising:
- providing a solution in direct contact with the substrate, the substrate comprising a ceramic containing the element Al, the solution comprising an organophosphorous compound in an amount of 0.5 wt% to 5.0 wt% and abrasive particles in the solution as free abrasives, forming a slurry;
- and
- machining the substrate with the abrasive particles, wherein a ratio MRRadd/MRRcon is not less than 1.8, where MRRadd is the material removal rate of polishing the substrate with said slurry comprising the abrasive and the organophosphorus compound, and where MRRcon is a material removal rate under identical process conditions with a control slurry free of the organophosphorus compound;
- wherein the organophosphorus compound is selected from the group consisting of hydroxy phosphono acetic acid, aminotri-(methylenephosphonic acid), hexapotassiumhexamethylenediaminetetra-(methylenephosphonic acid), 2-phosphonobutane-1,2,4-tricarboxylic acid, phosphate acid ester of ethoxylated phenol, and hydroxyethylidinediphosphonic acid.
1 more element
A method for machining a substrate, comprising:
- providing an solution in direct contact with the substrate, the substrate comprising a ceramic containing the element Al, the solution comprising an organophosphorous compound in an amount of 0.5 wt% to 5.0 wt% and having a pH greater than 8, the solution comprising abrasive particles as free abrasives, forming a slurry;
- and
- machining the substrate with the abrasive particles, wherein a ratio MRRadd/MRRcon is not less than 1.8, where MRRadd is the material removal rate of polishing the substrate with said slurry comprising the abrasive and the organophosphorus compound, and where MRRcon is a material removal rate under identical process conditions with a control slurry free of the organophosphorus compound;
- wherein the organophosphorus compound is selected from the group consisting of hydroxy phosphono acetic acid, aminotri-(methylenephosphonic acid), hexapotassiumhexamethylenediaminetetra-(methylenephosphonic acid), 2-phosphonobutane-1,2,4-tricarboxylic acid, phosphate acid ester of ethoxylated phenol, and hydroxyethylidinediphosphonic acid.
1 more element
Dependencies are inferred from the claim text.